AUIRFS4010
MOSFET N-CH 100V 180A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® AUIRFS4010 is an N-Channel Power MOSFET designed for high-current applications. This device features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current rating of 180A at 25°C (Tc), with a maximum power dissipation of 375W (Tc). The low on-resistance (Rds On) of 4.7mOhm is achieved at 106A and 10V gate-source voltage. Key characteristics include a gate charge (Qg) of 215 nC at 10V and input capacitance (Ciss) of 9575 pF at 50V. The AUIRFS4010 utilizes a surface mount TO-263-3, D2PAK package. This component is suitable for demanding automotive and industrial power management systems. It operates across a temperature range of -55°C to 175°C (TJ) and supports a maximum gate-source voltage of ±20V.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 106A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 215 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9575 pF @ 50 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
