AUIRFS3307Z
MOSFET N-CH 75V 120A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFS3307Z is an N-Channel HEXFET® power MOSFET designed for high-current applications. This component features a 75V drain-source voltage (Vdss) and a continuous drain current (Id) of 120A at 25°C, with a maximum power dissipation of 230W (Tc). The AUIRFS3307Z exhibits a low on-resistance (Rds On) of 5.8mOhm at 75A and 10V drive voltage, crucial for minimizing conduction losses. Its gate charge (Qg) is 110 nC maximum at 10V, and input capacitance (Ciss) is 4750 pF maximum at 50V. The device is housed in a TO-263-3, D2PAK package suitable for surface mounting and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive and industrial power control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4750 pF @ 50 V |
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