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AUIRFS3306TRL

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AUIRFS3306TRL

MOSFET N-CH 60V 120A D2PAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies HEXFET® N-Channel Power MOSFET, part number AUIRFS3306TRL, is engineered for high-performance applications. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 120A at 25°C (Tc), with a maximum power dissipation of 230W (Tc). The ultra-low on-resistance of 4.2mOhm is achieved at 75A and 10V gate-source voltage. The AUIRFS3306TRL utilizes advanced MOSFET technology, offering a gate charge of 125 nC at 10V and input capacitance of 4520 pF at 50V. Its robust construction supports a maximum gate-source voltage of ±20V and an operating temperature range of -55°C to 175°C (TJ). Supplied in a PG-TO263-3 package, also known as D2PAK, this component is suitable for surface mounting. This configuration is commonly found in automotive, industrial motor control, and power supply applications demanding high current handling and efficiency. The component is provided in Tape & Reel packaging.

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs4.2mOhm @ 75A, 10V
FET Feature-
Power Dissipation (Max)230W (Tc)
Vgs(th) (Max) @ Id4V @ 150µA
Supplier Device PackagePG-TO263-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4520 pF @ 50 V

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