AUIRFS3306
MOSFET N-CH 60V 120A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AUIRFS3306 is an N-Channel Power MOSFET from the HEXFET® series. This component features a Drain-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 120 A at 25°C (Tc). The Rds On is specified at a maximum of 4.2 mOhm at 75 A and 10 V gate drive. With a maximum power dissipation of 230 W (Tc), this device is designed for demanding applications. Key parameters include a Gate Charge (Qg) of 125 nC at 10 V and Input Capacitance (Ciss) of 4520 pF at 50 V. The AUIRFS3306 is housed in a TO-263-3, D2PAK package for surface mounting and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for automotive and industrial power conversion applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4520 pF @ 50 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
