AUIRFS3206TRL
MOSFET N-CH 60V 210A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFS3206TRL is an N-Channel HEXFET® Power MOSFET designed for high-current automotive applications. This surface mount device features a 60 V drain-source voltage and a continuous drain current of 120 A at 25°C (Tc), with a maximum power dissipation of 300 W (Tc). The low on-resistance is specified as 3 mOhm maximum at 75 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 170 nC at 10 V and input capacitance (Ciss) of 6540 pF at 50 V. The device is supplied in a D2PAK (TO-263-3, D2PAK) package on tape and reel. Operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in automotive power systems, including electric power steering and engine management.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6540 pF @ 50 V |
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