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AUIRFS3107-7TRL

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AUIRFS3107-7TRL

MOSFET N-CH 75V 240A D2PAK-7

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies AUIRFS3107-7TRL is a high-performance N-Channel Power MOSFET from the HEXFET® series. This surface mount component features a Drain-to-Source Voltage (Vdss) of 75V and a continuous drain current (Id) capability of 240A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 2.6mOhm at 160A and 10V Vgs, with a maximum power dissipation of 370W (Tc). Key parameters include a gate charge (Qg) of 240 nC (Max) at 10V and an input capacitance (Ciss) of 9200 pF (Max) at 50V. The MOSFET operates across a temperature range of -55°C to 175°C (TJ) and is supplied in a D2PAK (7-Lead) package, delivered on tape and reel. This component is commonly utilized in automotive, industrial, and power supply applications demanding robust switching performance.

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C240A (Tc)
Rds On (Max) @ Id, Vgs2.6mOhm @ 160A, 10V
FET Feature-
Power Dissipation (Max)370W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageD2PAK (7-Lead)
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9200 pF @ 50 V

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