AUIRFS3107-7P
MOSFET N-CH 75V 240A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFS3107-7P is an N-Channel HEXFET® Power MOSFET designed for high-current applications. This component features a 75V drain-source breakdown voltage (Vdss) and can handle a continuous drain current (Id) of 240A at 25°C (Tc), with a maximum power dissipation of 370W (Tc). The low on-resistance (Rds On) of 2.6mOhm at 160A and 10V gate drive voltage minimizes conduction losses. With a gate charge (Qg) of 240 nC at 10V and input capacitance (Ciss) of 9200 pF at 50V, it offers efficient switching characteristics. The AUIRFS3107-7P is housed in a 7-lead D2PAK (TO-263-7) surface-mount package, suitable for demanding thermal management. It operates across a temperature range of -55°C to 175°C (TJ) and has a maximum gate-source voltage (Vgs) of ±20V. This MOSFET is commonly utilized in automotive power management, industrial motor control, and high-power switching applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 160A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 370W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK (7-Lead) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9200 pF @ 50 V |
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