AUIRFS3107
MOSFET N-CH 75V 195A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRFS3107 is a 75V N-Channel power MOSFET designed for high-current applications. This device features a low Rds(on) of 3mOhm at 140A and 10V Vgs, delivering efficient power transfer. With a continuous drain current rating of 195A (Tc) and a maximum power dissipation of 370W (Tc), it is suitable for demanding thermal management. The AUIRFS3107 utilizes advanced MOSFET technology and is packaged in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB for surface mounting. Key electrical parameters include a gate charge of 240 nC at 10V and input capacitance of 9370 pF at 50V. It operates across an extended temperature range from -55°C to 175°C (TJ). This component is commonly utilized in automotive power management, industrial motor control, and high-power switching applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 140A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 370W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9370 pF @ 50 V |
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