AUIRFS3006-7TRL
MOSFET N-CH 60V 293A D2PAK-7PManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® MOSFET N-Channel AUIRFS3006-7TRL. This surface mount device offers a 60V drain-source voltage and a continuous drain current of 240A at 25°C (Tc). With a low on-resistance of 2.1mOhm at 168A and 10V, it features a maximum power dissipation of 375W (Tc). Key electrical characteristics include a gate charge (Qg) of 300 nC at 10V and an input capacitance (Ciss) of 8850 pF at 50V. The TO-263-7, D2PAK package facilitates efficient thermal management. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for high-power automotive and industrial applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 168A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8850 pF @ 50 V |
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