AUIRFS3006-7P
MOSFET N-CH 60V 240A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFS3006-7P is a HEXFET® series N-Channel Power MOSFET. This component offers a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 240A at 25°C (Tc). It features a low on-resistance (Rds On) of 2.1mOhm maximum at 168A and 10V Vgs. The device is packaged in a TO-263-7, D2PAK surface mount package, enabling efficient thermal management with a maximum power dissipation of 375W (Tc). Key electrical parameters include a gate charge (Qg) of 300 nC maximum at 10V Vgs and input capacitance (Ciss) of 8850 pF maximum at 50V Vds. It operates within an extended temperature range of -55°C to 175°C. This MOSFET is suitable for high-power automotive and industrial applications requiring robust switching performance.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 168A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8850 pF @ 50 V |
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