AUIRFS3006
MOSFET N-CH 60V 195A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFS3006 is an N-Channel HEXFET® power MOSFET designed for high-current automotive applications. This surface mount device features a 60V drain-source voltage rating and a continuous drain current capability of 195A at 25°C (Tc), with a maximum power dissipation of 375W (Tc). The AUIRFS3006 exhibits a low on-resistance of 2.5mOhm at 170A and 10V, enabled by its advanced MOSFET technology. Key parameters include a gate charge (Qg) of 300 nC at 10V and an input capacitance (Ciss) of 8970 pF at 50V. The device operates within an extended temperature range of -55°C to 175°C (TJ) and is packaged in a TO-263-3, D2PAK. This component is commonly utilized in automotive power systems, including motor control and power distribution units.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 170A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8970 pF @ 50 V |
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