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AUIRFS3004-7P

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AUIRFS3004-7P

MOSFET N-CH 40V 240A D2PAK-7

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies AUIRFS3004-7P is an N-Channel HEXFET® Power MOSFET featuring a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 240A at 25°C. This device offers a low on-resistance (Rds On) of 1.25mOhm at 195A and 10V gate drive, with a maximum power dissipation of 380W (Tc). The AUIRFS3004-7P utilizes advanced MOSFET technology for high efficiency and performance. Its PG-TO263-7 package, also known as D2PAK-7, facilitates surface mounting and is designed for demanding applications in automotive and industrial sectors where robust power handling is critical. Key electrical characteristics include a gate charge (Qg) of 240 nC at 10V and an input capacitance (Ciss) of 9130 pF at 25V. The operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C240A (Tc)
Rds On (Max) @ Id, Vgs1.25mOhm @ 195A, 10V
FET Feature-
Power Dissipation (Max)380W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackagePG-TO263-7
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9130 pF @ 25 V

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