AUIRFS3004
MOSFET N-CH 40V 195A D2PAK-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' AUIRFS3004 is an N-Channel HEXFET® power MOSFET designed for high-performance applications. This component features a maximum drain-to-source voltage of 40 V and a continuous drain current of 195 A at 25°C, with a maximum power dissipation of 380 W. The device exhibits a low on-resistance of 1.75 mOhm at 195 A and 10 V, facilitated by its advanced MOSFET technology. Gate charge is specified at 240 nC maximum at 10 V, and input capacitance (Ciss) is 9200 pF maximum at 25 V. The AUIRFS3004 is housed in a TO-263-3, D2PAK (2 Leads + Tab) surface mount package, suitable for demanding thermal environments with an operating temperature range of -55°C to 175°C. This MOSFET is commonly utilized in automotive and industrial power systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.75mOhm @ 195A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 380W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK-3 (TO-263) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9200 pF @ 25 V |
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