AUIRFR9024N
MOSFET P-CH 55V 11A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AUIRFR9024N, a P-Channel HEXFET® power MOSFET, features a drain-source voltage of 55V and a continuous drain current of 11A at 25°C (Tc). This component offers a maximum power dissipation of 38W (Tc) and a low on-resistance of 175mOhm at 6.6A and 10V gate-source voltage. Designed for surface mounting, it is housed in a TO-252AA (DPAK) package. Key electrical characteristics include a gate charge of 19 nC at 10V and input capacitance of 350 pF at 25V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in automotive and industrial applications requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
