AUIRFR8405TRL
MOSFET N-CH 40V 100A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies AUIRFR8405TRL is an N-Channel HEXFET® power MOSFET designed for demanding applications. This device features a 40V drain-source voltage and a continuous drain current of 100A at 25°C (Tc). With a low on-resistance of 1.98mOhm maximum at 90A and 10V, it ensures efficient power transfer. The AUIRFR8405TRL offers a maximum power dissipation of 163W (Tc) and a gate charge of 155 nC at 10V. Its TO-252AA (DPAK) surface mount package is suitable for automated assembly processes. Key parameters include an input capacitance (Ciss) of 5171pF maximum at 25V and a gate-source threshold voltage (Vgs(th)) of 3.9V maximum at 100µA. Operating temperature range is from -55°C to 175°C (TJ). This component is widely utilized in automotive and industrial power switching applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.98mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 163W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 100µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5171 pF @ 25 V |
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