AUIRFR8403TRLARMA1
MOSFET_(20V 40V)Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AUIRFR8403TRLARMA1, an N-Channel HEXFET® power MOSFET, is designed for high-performance applications with its 40V drain-source breakdown voltage and 100A continuous drain current capability at 25°C. This surface-mount device, packaged in a PG-TO252-3-901 (DPAK) configuration, features a low on-resistance of 3.1mOhm at 76A and 10V Vgs. The AUIRFR8403TRLARMA1 boasts a maximum power dissipation of 99W at 25°C (Tc) and a gate charge of 99nC at 10V. Its automotive grade qualification (AEC-Q100) and operating temperature range of -55°C to 175°C (TJ) make it suitable for demanding automotive and industrial power switching applications. The component utilizes advanced MOSFET technology and is supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 76A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 99W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 100µA |
| Supplier Device Package | PG-TO252-3-901|DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 99 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3171 pF @ 25 V |
| Qualification | AEC-Q100 |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
