AUIRFR8403TRL
MOSFET N-CH 40V 100A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET designed for demanding applications. This surface-mount device, part number AUIRFR8403TRL, features a 40V drain-source voltage and a continuous drain current capability of 100A at 25°C. The TO-252AA (DPAK) package offers efficient thermal management with a maximum power dissipation of 99W. Key electrical characteristics include a low on-resistance of 3.1mOhm at 76A and 10V, and a gate charge of 99nC at 10V. With a gate-source voltage tolerance of ±20V and an operating temperature range of -55°C to 175°C, this MOSFET is suitable for automotive and industrial power switching applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 76A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 99W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 100µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 99 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3171 pF @ 25 V |
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