AUIRFR8403
MOSFET N-CH 40V 100A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFR8403 from the HEXFET® series is an N-Channel Power MOSFET designed for demanding applications. This device features a 40 V drain-source voltage and a continuous drain current capability of 100 A at 25°C (Tc), with a maximum power dissipation of 99 W (Tc). The low on-resistance of 3.1 mOhm at 76 A and 10 V gate drive ensures efficient power transfer. Key parameters include a gate charge (Qg) of 99 nC at 10 V and input capacitance (Ciss) of 3171 pF at 25 V. The AUIRFR8403 is housed in a TO-252AA (DPAK) surface-mount package, facilitating integration into compact designs. It operates across a wide temperature range of -55°C to 175°C (TJ). This component is suitable for use in automotive and industrial power switching applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 76A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 99W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 100µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 99 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3171 pF @ 25 V |
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