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AUIRFR8401TRL

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AUIRFR8401TRL

MOSFET N-CH 40V 100A DPAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies AUIRFR8401TRL is an N-Channel HEXFET® Power MOSFET designed for demanding applications. This component features a 40V drain-source voltage rating and a continuous drain current capability of 100A at 25°C (Tc), with a maximum power dissipation of 79W (Tc). The low on-resistance of 4.25mOhm at 60A and 10V drive voltage, coupled with a gate charge of 63 nC at 10V, ensures efficient switching performance. Qualifying for AEC-Q101, this MOSFET is suitable for automotive applications, including power management and motor control systems. It is supplied in a TO-252AA (DPAK) surface-mount package, presented on a tape and reel for automated assembly. The operating temperature range is -55°C to 175°C.

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs4.25mOhm @ 60A, 10V
FET Feature-
Power Dissipation (Max)79W (Tc)
Vgs(th) (Max) @ Id3.9V @ 50µA
Supplier Device PackageTO-252AA (DPAK)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 25 V
QualificationAEC-Q101

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