AUIRFR8401
MOSFET N-CH 40V 100A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRFR8401 is an N-Channel power MOSFET designed for demanding applications. This device features a 40V drain-to-source breakdown voltage and a continuous drain current capability of 100A at 25°C (Tc). With a low on-resistance of 4.25mOhm maximum at 60A and 10V Vgs, it minimizes conduction losses. The AUIRFR8401 offers a gate charge of 63 nC maximum at 10V and an input capacitance of 2200 pF maximum at 25V. Packaged in a TO-252AA (DPAK) surface mount configuration, it dissipates up to 79W (Tc) and operates across a wide temperature range from -55°C to 175°C. This component is suitable for automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.25mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 50µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
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