AUIRFR6215
MOSFET P-CH 150V 13A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFR6215 is a P-Channel HEXFET® power MOSFET designed for high-efficiency switching applications. This component features a 150V drain-source voltage (Vdss) and a continuous drain current (Id) of 13A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 295mOhm at 6.6A and 10V gate-source voltage (Vgs). With a maximum power dissipation of 110W (Tc), it is suitable for demanding power management tasks. The AUIRFR6215 is housed in a TO-252AA (DPAK) surface-mount package, facilitating efficient thermal management and board integration. Key electrical parameters include a gate charge (Qg) of 66 nC (max) at 10V and an input capacitance (Ciss) of 860 pF (max) at 25V. This MOSFET is an ideal choice for automotive and industrial applications requiring robust power switching.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 295mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 25 V |
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