AUIRFR5410TRL
MOSFET P-CH 100V 13A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AUIRFR5410TRL is a P-Channel HEXFET® power MOSFET designed for automotive applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 13A at 25°C (Tc), with a maximum power dissipation of 66W (Tc). The device exhibits a typical Rds On of 205mOhm at 7.8A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 58 nC at 10V and an Input Capacitance (Ciss) of 760 pF at 25V. The AUIRFR5410TRL is housed in a PG-TO252-3 (DPAK) surface mount package and is qualified to AEC-Q101 standards, making it suitable for demanding automotive systems. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 205mOhm @ 7.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 66W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO252-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 25 V |
| Qualification | AEC-Q101 |
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