AUIRFR5410
MOSFET P-CH 100V 13A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies P-Channel Power MOSFET, part of the HEXFET® series, is the AUIRFR5410. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 13A at 25°C, with a maximum power dissipation of 66W (Tc). The device offers a maximum On-Resistance (Rds On) of 205mOhm at 7.8A and 10V gate drive. Key parameters include a gate charge (Qg) of 58nC @ 10V and input capacitance (Ciss) of 760pF @ 25V. The AUIRFR5410 is housed in a TO-252AA (DPAK) surface-mount package. This MOSFET is utilized in automotive and industrial applications requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 205mOhm @ 7.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 66W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 25 V |
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