AUIRFR5305TR
MOSFET P-CH 55V 31A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AUIRFR5305TR is a P-channel HEXFET® power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 55 V and a continuous Drain Current (Id) of 31 A at 25°C (Tc). The Rds(On) is specified at a maximum of 65 mOhm when Id is 16 A and Vgs is 10 V. With a Gate Charge (Qg) of 63 nC maximum at 10 V and Input Capacitance (Ciss) of 1200 pF maximum at 25 V, this MOSFET offers efficient switching characteristics. The device is housed in a TO-252AA (DPAK) surface mount package and is supplied on tape and reel. This component is commonly utilized in automotive and industrial power control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 16A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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