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AUIRFR48ZTRL

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AUIRFR48ZTRL

MOSFET N-CH 55V 42A DPAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies AUIRFR48ZTRL is an N-Channel Power MOSFET from the HEXFET® series. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous drain current (Id) capability of 42A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 11mOhm maximum at 37A and 10V gate-source voltage. With a maximum power dissipation of 91W (Tc), this MOSFET is designed for efficient power handling. Key parameters include a gate charge (Qg) of 60nC maximum at 10V and an input capacitance (Ciss) of 1720pF maximum at 25V. The AUIRFR48ZTRL is supplied in a TO-252AA (DPAK) surface mount package and operates within a temperature range of -55°C to 175°C (TJ). This component is suitable for applications in automotive and industrial power management systems.

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C42A (Tc)
Rds On (Max) @ Id, Vgs11mOhm @ 37A, 10V
FET Feature-
Power Dissipation (Max)91W (Tc)
Vgs(th) (Max) @ Id4V @ 50µA
Supplier Device PackageTO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1720 pF @ 25 V

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