AUIRFR4620TRL
MOSFET N-CH 200V 24A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRFR4620TRL is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 24 A at 25°C with a thermal conductivity (Tc) rating. The low on-resistance (Rds On) of 78 mOhm at 15 A and 10 V gate drive ensures minimal conduction losses. With a maximum power dissipation of 144 W (Tc), it is suitable for demanding power conversion tasks. The device utilizes advanced MOSFET technology and is presented in a TO-252AA (DPAK) surface-mount package, supplied on tape and reel. Key parameters include a Gate Charge (Qg) of 38 nC at 10 V and an Input Capacitance (Ciss) of 1710 pF at 50 V, facilitating efficient switching. This MOSFET is utilized in various industrial sectors including automotive, industrial automation, and power supplies.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 144W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1710 pF @ 50 V |
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