AUIRFR4620
MOSFET N-CH 200V 24A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRFR4620 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a maximum drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 24A at 25°C (Tc). The low on-resistance (Rds On) of 78mOhm at 15A and 10V drive voltage, coupled with a maximum power dissipation of 144W (Tc), makes it suitable for demanding power management tasks. Key parameters include a gate charge (Qg) of 38 nC at 10V and input capacitance (Ciss) of 1710 pF at 50V. The AUIRFR4620 is housed in a TO-252AA (DPAK) surface mount package, offering excellent thermal performance and ease of assembly. It operates across a wide temperature range of -55°C to 175°C (TJ). This component is utilized in automotive, industrial, and power supply sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 144W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1710 pF @ 50 V |
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