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AUIRFR4615TRL

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AUIRFR4615TRL

MOSFET N-CH 150V 33A DPAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies HEXFET® AUIRFR4615TRL is an N-Channel power MOSFET with a DPAK (TO-252AA) surface mount package. It offers a Drain-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 33A at 25°C (Tc). The device features a low Rds(on) of 42mOhm maximum at 21A and 10V Vgs, with a maximum Gate Charge (Qg) of 26nC at 10V. Input capacitance (Ciss) is specified at 1750pF maximum at 50V. This MOSFET is designed for high-efficiency power conversion applications, including automotive and industrial power supplies, motor control, and power management systems, operating within a temperature range of -55°C to 175°C (TJ). The component is supplied on tape and reel.

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Rds On (Max) @ Id, Vgs42mOhm @ 21A, 10V
FET Feature-
Power Dissipation (Max)144W (Tc)
Vgs(th) (Max) @ Id5V @ 100µA
Supplier Device PackageTO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1750 pF @ 50 V

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