AUIRFR4615
MOSFET N-CH 150V 33A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRFR4615 is a N-Channel Power MOSFET designed for high-efficiency switching applications. It features a Drain-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 33A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 42mOhm maximum at 21A and 10V gate drive. With a maximum power dissipation of 144W (Tc), it is suitable for demanding thermal environments. The AUIRFR4615 is packaged in a TO-252AA (DPAK) surface-mount configuration, enabling efficient board space utilization. Key parameters include a Gate Charge (Qg) of 26 nC maximum at 10V and an Input Capacitance (Ciss) of 1750 pF maximum at 50V. This component is commonly utilized in automotive and industrial power management systems. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 144W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1750 pF @ 50 V |
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