AUIRFR4292TRL
MOSFET N-CH 250V 9.3A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRFR4292TRL is a 250V N-Channel power MOSFET in a DPAK package. This device offers a continuous drain current of 9.3A at 25°C (Tc) and a maximum continuous power dissipation of 100W (Tc). Key electrical parameters include a Vgs(th) of 5V at 50µA and a maximum Rds(on) of 345mOhm at 5.6A and 10V Vgs. The input capacitance (Ciss) is 705pF at 25V, with a gate charge (Qg) of 20nC at 10V. Operating temperature ranges from -55°C to 175°C (TJ). This component is suitable for automotive and industrial applications requiring robust power switching. The part is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 345mOhm @ 5.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 50µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 705 pF @ 25 V |
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