AUIRFR4105ZTRL
MOSFET N-CH 55V 20A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AUIRFR4105ZTRL is a HEXFET® N-Channel power MOSFET designed for high-efficiency switching applications. This component features a 55V drain-source voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C (Tc), with a maximum power dissipation of 48W (Tc). The on-resistance (Rds On) is specified at a maximum of 24.5mOhm at 18A and 10V gate drive. Key electrical characteristics include a gate charge (Qg) of 27 nC (Max) at 10V and input capacitance (Ciss) of 740 pF (Max) at 25V. The device operates across a wide temperature range of -55°C to 175°C (TJ) and is supplied in a TO-252AA (DPAK) surface-mount package, delivered on tape and reel. This MOSFET is suitable for automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 24.5mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 25 V |
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