AUIRFR3806TRL
MOSFET N-CH 60V 43A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRFR3806TRL is an N-Channel Power MOSFET designed for high-efficiency applications. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 43A at 25°C (Tc). The device offers a low on-resistance of 15.8mOhm maximum at 25A and 10V, ensuring minimal conduction losses. It is packaged in a TO-252AA (DPAK) surface mount configuration, suitable for automated assembly. Key electrical parameters include a gate charge (Qg) of 30 nC at 10V and input capacitance (Ciss) of 1150 pF at 50V. With a maximum power dissipation of 71W (Tc) and an operating temperature range of -55°C to 175°C, this MOSFET is well-suited for demanding automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Rds On (Max) @ Id, Vgs | 15.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 50 V |
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