AUIRFR3710ZTRL
MOSFET N-CH 100V 42A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRFR3710ZTRL is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 100 V drain-source voltage (Vdss) and a continuous drain current (Id) of 42 A at 25°C, with a maximum power dissipation of 140 W (Tc). The low on-resistance (Rds On) is rated at 18 mOhm at 33 A and 10 V gate-source voltage. With a gate charge (Qg) of 100 nC at 10 V and an input capacitance (Ciss) of 2930 pF at 25 V, it offers excellent switching characteristics. The device operates across a wide temperature range of -55°C to 175°C (TJ). Packaged in a TO-252AA (DPAK) surface-mount configuration and supplied on tape and reel, the AUIRFR3710ZTRL is suitable for automotive, industrial, and power supply applications requiring robust performance.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2930 pF @ 25 V |
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