AUIRFR3607TRL
MOSFET N-CH 75V 80A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AUIRFR3607TRL is an N-Channel HEXFET® power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 75 V and a continuous Drain Current (Id) of 56 A at 25°C (Tc), with a maximum power dissipation of 140 W (Tc). The low on-resistance of 9 mOhm at 46 A and 10 V (Vgs) ensures efficient power transfer. Key parameters include a gate charge (Qg) of 84 nC at 10 V and input capacitance (Ciss) of 3070 pF at 50 V. The device operates across a wide temperature range from -55°C to 175°C (TJ). It is supplied in a TO-252AA (DPAK) surface-mount package, delivered on tape and reel. This MOSFET is suitable for automotive, industrial, and power supply applications requiring robust switching performance.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 46A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3070 pF @ 50 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
