AUIRFR3607
MOSFET N-CH 75V 56A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFR3607 is an N-Channel HEXFET® power MOSFET designed for high-efficiency applications. This device features a Drain-to-Source Voltage (Vdss) of 75 V and a continuous Drain Current (Id) of 56 A at 25°C. The AUIRFR3607 exhibits a low on-resistance (Rds On) of 9 mOhm maximum at 46 A and 10 V gate drive. With a maximum power dissipation of 140 W (Tc), it is suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 84 nC at 10 V and an input capacitance (Ciss) of 3070 pF maximum at 50 V. The device is housed in a TO-252AA DPAK package for surface mounting. This component is widely utilized in automotive and industrial power conversion systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 46A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3070 pF @ 50 V |
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