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AUIRFR3504TRL

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AUIRFR3504TRL

MOSFET N-CH 40V 56A DPAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies AUIRFR3504TRL is an N-Channel HEXFET® power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 40 V and a continuous drain current (Id) capability of 56 A at 25°C (Tc). The low on-resistance (Rds On) of 9.2 mOhm at 30 A and 10 V gate drive ensures minimal conduction losses. With a maximum power dissipation of 140 W (Tc), it is suitable for demanding thermal environments. The device is packaged in a TO-252-3, DPAK (also known as TO-252AA) surface-mount package, supplied on tape and reel. Key parameters include a gate charge (Qg) of 71 nC at 10 V and input capacitance (Ciss) of 2150 pF at 25 V. This MOSFET is widely utilized in automotive power management, industrial motor control, and power supply circuits.

Additional Information

Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C56A (Tc)
Rds On (Max) @ Id, Vgs9.2mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)140W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2150 pF @ 25 V

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