AUIRFR2607ZTRL
MOSFET N-CH 75V 42A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AUIRFR2607ZTRL is an N-Channel Power MOSFET from the HEXFET® series, designed for demanding automotive and industrial applications. This component features a 75V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 42A (Tc) at 25°C. With a low on-resistance (Rds On) of 22mOhm maximum at 30A and 10V gate-source voltage (Vgs), it minimizes conduction losses. The device offers a maximum power dissipation of 110W (Tc) and operates within a temperature range of -55°C to 175°C (TJ). Packaged in a TO-252AA (DPAK) surface-mount configuration and supplied on tape and reel, the AUIRFR2607ZTRL is suitable for high-density power designs. Key parameters include a gate charge (Qg) of 51 nC maximum at 10V Vgs and input capacitance (Ciss) of 1440 pF maximum at 25V Vds.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1440 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
