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AUIRFR2407TRL

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AUIRFR2407TRL

MOSFET N-CH 75V 42A DPAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies AUIRFR2407TRL is an N-Channel HEXFET® power MOSFET designed for high-efficiency switching applications. This component features a 75V Drain-Source Voltage (Vdss) and a continuous drain current capability of 42A at 25°C (Tc). With a low Rds(on) of 26mOhm maximum at 25A and 10V Vgs, it minimizes conduction losses. The TO-252AA (DPAK) surface mount package offers excellent thermal performance with a maximum power dissipation of 110W (Tc). Key parameters include a gate charge (Qg) of 110 nC at 10V and an input capacitance (Ciss) of 2400 pF at 25V. This MOSFET is suitable for automotive, industrial, and power supply applications. The device operates within a temperature range of -55°C to 175°C (TJ) and is supplied in Tape & Reel packaging.

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C42A (Tc)
Rds On (Max) @ Id, Vgs26mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)110W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-252AA (DPAK)
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2400 pF @ 25 V

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