AUIRFR2307Z
MOSFET N-CH 75V 42A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® AUIRFR2307Z is an N-Channel power MOSFET designed for high-efficiency applications. This component features a 75V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 42A at 25°C (Tc). The device exhibits a low on-resistance (Rds(on)) of 16mOhm maximum at 32A and 10V gate drive. With a maximum power dissipation of 110W (Tc), it supports demanding thermal environments. The AUIRFR2307Z is packaged in a TO-252AA (DPAK) surface-mount package, facilitating integration into compact designs. Key electrical parameters include a gate charge (Qg) of 75 nC at 10V and an input capacitance (Ciss) of 2190 pF maximum at 25V. This MOSFET is suitable for use in automotive and industrial power conversion systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2190 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
