AUIRFR120ZTRL
MOSFET N-CH 100V 8.7A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number AUIRFR120ZTRL, offers a 100V drain-source voltage capability with a continuous drain current rating of 8.7A at 25°C (Tc). This device features a maximum on-resistance of 190mOhm at 5.2A and 10V gate-source voltage. Designed for efficient power conversion, it operates within a temperature range of -55°C to 175°C (TJ). The AUIRFR120ZTRL is packaged in a TO-252AA (DPAK) surface-mount configuration, supplied on tape and reel (TR). Key parameters include a gate charge of 10nC (max) at 10V and input capacitance of 310pF (max) at 25V. This MOSFET is suitable for applications in automotive, industrial power control, and power supply designs.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 5.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 25µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 25 V |
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