AUIRFR1018E
MOSFET N-CH 60V 56A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRFR1018E is an N-Channel Power MOSFET with a Drain-to-Source Voltage (Vdss) of 60V. It provides a continuous drain current (Id) of 56A at 25°C and a maximum power dissipation of 110W (Tc). The device features a low on-resistance (Rds On) of 8.4mOhm maximum at 47A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 69nC maximum at 10V and an input capacitance (Ciss) of 2290pF maximum at 50V. This MOSFET is housed in a TO-252AA (DPAK) surface mount package, suitable for demanding applications in automotive and industrial sectors. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 47A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2290 pF @ 50 V |
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