AUIRFR024NTRL
MOSFET N-CH 55V 17A TO252AAManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AUIRFR024NTRL HEXFET® N-Channel Power MOSFET. This component features a 55V drain-source voltage (Vdss) and a continuous drain current (Id) of 17A at 25°C. The device offers a low on-resistance (Rds On) of 75mOhm maximum at 10A and 10V. With a gate charge (Qg) of 20 nC maximum at 10V and input capacitance (Ciss) of 370 pF maximum at 25V, it is suitable for demanding switching applications. The MOSFET is housed in a TO-252AA surface mount package, providing a power dissipation capability of 45W. Operating across a wide temperature range from -55°C to 175°C, this component is utilized in automotive and industrial power management systems. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
