AUIRFR024N
MOSFET N-CH 55V 17A TO252AAManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AUIRFR024N, an N-Channel HEXFET® power MOSFET, features a 55V drain-to-source voltage and a continuous drain current of 17A at 25°C. With a low on-resistance of 75mOhm maximum at 10A and 10V Vgs, this component offers efficient switching. It is housed in a TO-252AA (DPAK) surface-mount package, enabling high-density board layouts. The device supports a maximum power dissipation of 45W at 25°C case temperature and operates across a wide temperature range of -55°C to 175°C. Key parameters include a gate charge of 20 nC maximum at 10V and input capacitance of 370 pF maximum at 25V. This MOSFET is suitable for automotive, industrial, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 25 V |
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