AUIRFP4568-E
MOSFET N-CH 150V 171A TO247ADManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number AUIRFP4568-E. This device features a drain-source voltage (Vdss) of 150 V and a continuous drain current (Id) of 171 A at 25°C. The low on-resistance (Rds On) is 5.9 mOhm maximum at 103 A and 10 V gate drive. Maximum power dissipation (Pd) is 517 W at 25°C (Tc). Key parameters include a gate charge (Qg) of 227 nC maximum at 10 V and input capacitance (Ciss) of 10470 pF maximum at 50 V. The AUIRFP4568-E is housed in a TO-247AD package with through-hole mounting. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for high-power switching applications in automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 171A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.9mOhm @ 103A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 517W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247AD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 227 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10470 pF @ 50 V |
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