AUIRFP4310Z
MOSFET N-CH 100V 128A TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AUIRFP4310Z is an N-Channel HEXFET® power MOSFET designed for high-performance applications. This AEC-Q101 qualified component features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 128 A at 25°C (Tc). The low on-resistance, specified at a maximum of 6 mOhm at 77 A and 10 V, ensures efficient power transfer. With a gate charge (Qg) of 188 nC at 10 V and an input capacitance (Ciss) of 7120 pF at 50 V, this device is suitable for demanding switching applications. The AUIRFP4310Z offers a maximum power dissipation of 278 W (Tc) and operates across a temperature range of -55°C to 175°C (TJ). Its PG-TO247-3 package with through-hole mounting makes it ideal for automotive and industrial power systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 128A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 77A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | PG-TO247-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 188 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7120 pF @ 50 V |
| Qualification | AEC-Q101 |
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