AUIRFP2907Z
MOSFET N-CH 75V 170A TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number AUIRFP2907Z. This device features a Drain-Source Voltage (Vdss) of 75V and a continuous Drain Current (Id) of 170A at 25°C, with a maximum power dissipation of 310W (Tc). The low on-resistance is specified at 4.5mOhm at 90A and 10V gate drive. Key parameters include a gate charge (Qg) of 270 nC (max) at 10V and input capacitance (Ciss) of 7500 pF (max) at 25V. This RoHS compliant component is housed in a TO-247AC package, suitable for through-hole mounting. The AUIRFP2907Z is utilized in demanding applications within the automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 25 V |
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