AUIRFP2602
MOSFET N-CH 24V 180A TO247ADManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFP2602 is an N-Channel HEXFET® power MOSFET designed for high-current applications. This component features a Drain-Source Voltage (Vdss) of 24V and a continuous Drain Current (Id) of 180A at 25°C, with a low on-resistance (Rds On) of 1.6mOhm at 180A and 10V gate drive. The device offers a maximum power dissipation of 380W (Tc) and a typical Gate Charge (Qg) of 390 nC at 10V. With a high switching frequency capability and a maximum operating temperature of 175°C, the AUIRFP2602 is suitable for automotive and industrial power management systems. The component is supplied in a TO-247AD package for through-hole mounting and operates with a gate-source voltage range of ±20V.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 180A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 380W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247AD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 390 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11220 pF @ 25 V |
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