AUIRFN8405TR
MOSFET N-CH 40V 95A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRFN8405TR is a 40V N-Channel Power MOSFET in a PQFN (5x6) package. This surface mount component offers a continuous drain current of 95A at 25°C (Tc) and a low on-resistance of 2mOhm at 50A, 10V. Key parameters include a Vgs(th) of 3.9V (Max) at 100µA and a gate charge (Qg) of 117 nC at 10V. The device supports a wide operating temperature range from -55°C to 175°C (TJ). With a maximum power dissipation of 136W (Tc), this MOSFET is suitable for demanding applications across automotive, industrial power control, and high-power switching systems. The component is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 95A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 136W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 100µA |
| Supplier Device Package | PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5142 pF @ 25 V |
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