AUIRFN8401TR
MOSFET N-CH 40V 84A PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFN8401TR, a HEXFET® N-Channel Power MOSFET, offers a 40V drain-source breakdown voltage and a continuous drain current rating of 84A at 25°C (Tc). This device features a low on-resistance of 4.6mOhm maximum at 50A and 10V Vgs, with a gate drive requirement of 10V for optimal performance. The PQFN (5x6) package provides efficient thermal management, with a maximum power dissipation of 63W at 25°C (Tc) and 4.2W at 25°C (Ta). Key parameters include a gate charge (Qg) of 66nC (max) at 10V and input capacitance (Ciss) of 2170pF (max) at 25V. Operating across a wide temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for demanding applications in automotive and industrial power systems. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 84A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.2W (Ta), 63W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 50µA |
| Supplier Device Package | PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2170 pF @ 25 V |
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