AUIRFN7110TR
MOSFET N-CH 100V 58A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFN7110TR is an N-Channel HEXFET® power MOSFET designed for demanding automotive applications. This component features a 100V drain-source breakdown voltage and supports a continuous drain current of 58A at 25°C (Tc). The low on-resistance, specified at a maximum of 14.5mOhm at 35A and 10V gate drive, contributes to efficient power transfer. With a gate charge (Qg) of 74nC (max) at 10V, it offers robust switching performance. The device is housed in an 8-PQFN (5x6) package, suitable for surface mounting, and rated for an operating temperature range of -55°C to 175°C (TJ). Its high power dissipation capabilities, reaching 125W (Tc), make it suitable for high-power density designs. AEC-Q101 qualification ensures reliability for automotive systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.3W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3050 pF @ 25 V |
| Qualification | AEC-Q101 |
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